東工大 T. M. Hoang氏の論文が、Applied Physics Lettersに掲載されました / Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices featured

AIP Scilghts: https://aip.scitation.org/doi/10.1063/10.0003408

Appl. Phys. Lett. 118, 044001 (2021); https://doi.org/10.1063/5.0027603

Tuan Minh Hoang1, Hitoshi Ishiwata1,2, Yuta Masuyama3, Yuichi Yamazaki3, Kazutoshi Kojima4, Sang-Yun Lee5, Takeshi Ohshima3, Takayuki Iwasaki1,2, Digh Hisamoto1,6, and Mutsuko Hatano1,3

1 Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0076, Japan
3 National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan
4 National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
5 Department of Physics and Photon Science at Gwangju Institute of Science and Technology, Gwangju 123, South Korea
6 Research and Development Group, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan